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Wafer mapping systems

Wafer mapping systems

Products > Semiconductor evaluation > Wafer process > Wafer mapping systems




Identifying any defect or loss on a wafer immediately is a critical part of labs and manufacturers. Wafer mapping systems help Si wafer measurement in real-time and understanding the wafer characteristics at a glance by visualizing the results in a color-coded grid.


3 types of the stage - Rθ, XY and RθXY - can be mounted on this system:

SF-3Rθ performs at high speed up to 12-inch wafer. Pattern matching and X-Y motion reproducibility are possible with either SF-3AA or SF-300AAF.

 Features  

SF-3Rθ

  • Provides information on wafer thickness at high speed
  • Multi-point mapping
  • In-plane thickness measurement of a maximum Ø 300mm wafer
  • Incorporated into semiconductor processing equipment such as wafer grinding equipment and temporary bonders


SF-3AA, SF-300AAF

  • Aligns fine patterns and provides various wafer thickness information
  • Mounts a high precision X-Y stage to make reproducibility accurate(± 2μm or less)
  • MEMS and sensor devices are measurable(option: 6, 8, and 12 inch)
  • Supports other than wafer shape


Product image: SF-3Rθ, SF-3AA and SF-300AAF

 Specifications 
TypeRθ mapping systemhigh precision
X-Y mapping system		Integration mapping system
ModelSF-3RθSF-3AASF-300AAF
Stage typeRθ stageX-Y stageRθXY stage
Measurement systemprobeprobemicroscope head
Max. wafer sizeup to 300mmup to 300mm300mm
Wafer angle correction functionXOO
Pattern alignment functionXOO
Wafer thickness rangeSF-3 thickness sensor specification
Sizebody465(W) x 615(D) x 540(H)mm570(W) x 700(D) x 680(H)mm475(W) x 555(D) x 1,620(H)mm
controller430(W) x 430(D) x 210(H)mm500(W) x 177(D) x 273(H)mm


Measurement images by Rθ and X-Y stages

Rθ stage                                                                         X-Y stage

 Measurement 
Measurement item
  • Patterned wafer
  • Silicon wafer, SiC, GaN, various compound wafers
  • Temporary wafer


Measured data

>  SF-3Rθ  Bonded wafer(Si / bonding / support substrate)


Example: measurement data by SF-3Rθ

Si film thickness distribution(approx. 775μm)                                      Bonding film thickness distribution(approx. 15μm)



>  SF-3AA / SF-300AAF  Bonded wafer(Si / bonding / support substrate)

             Bonding film thickness distribution(approx. 25μm)


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