Si wafer thickness monitoring system

It is a non-contact, non-destructive thickness measurement method using optics
In the case of silicon, thickness measurements from 6 to 1300 μm are possible
Parameters can be set after spectrum analysis
It uses proprietary analytical engine technology and algorithms
The automatic mapping function is available to measure the thickness distribution
It measures the thickness of multi-layered and each layer of temporary wafers
High-speed real-time monitoring - max. 60,000 points per 1 min - is possible during CMP, BG, and Final polishing(TTV, GBIR)

Model	SF-3/200	SF-3/300	SF-3/800	SF-3/1300
Silicon meas. thickness range	6 ~ 400μm	10 ~ 775μm	20 ~ 1,000μm	50 ~ 1,300μm
Resin meas. thickness range	10 ~ 1,000μm	20 ~ 1,500μm	40 ~ 2,000μm	1,000 ~ 2,600μm
Minimum sampling period	5kHz(200μsec.)
Repeatability	*less than ± 0.01%
Measurement size	**over about Φ20μm
Measurement distance	50mm, 80mm, 120mm, 150mm, 200mm
Light source	semiconductor light source(laser class 3B product)
Analysis method	FFT analysis
Interface	LAN, I/O input/output terminal
Power supply	DC 24V specification(AC power supply unit sold separately)
Size	123(W) x 224(D) x 128(H)mm
Optional item	other lengths of probes, AC power, aluminum reference, measured light detection target, fiber cleaner

*the standard relative deviation of our standard sample AirGap(approx.1,000μm) at time of measurement(n=20)

**design value at time of WD 80mm probe specification

SF-3 series