FE-5000 series

FE-5000 series

Products > Display evaluation > TFT(oxide/LTPS) > FE-5000 series

Products > Semiconductor evaluation > Metrology > FE-5000 series

FE-5000 series Spectro ellipsometer

Automatic angle adjusting mechanism applied to the basic spectrum ellipsometry system enables accurate film thickness measurement.


Detachable retarder and rotating analyzer also widen the scope of choices making it available to measure and improve the measurement accuracy.


#ellipsometer, thickness, n&k, micro spot, multi-layer, CVD(SiO2, SiNx), oxide, organic, material

 Features  
  • Ellipsometry measurement for both visible and ultraviolet ray range(250 ~ 800nm)

  • Nano-order thin film thickness

  • Quick measurement using multi channel spectroscopy(over 400ch)

  • Angle adjustable mechanism for detailed analysis

  • High operability with optical constant database and recipe registration function

  • Optical constant measurement using multi layer fitting analysis for quality control of film thickness and film property

▲FE-5000                                                ▲FE-5000S

▲FE-5000                      ▲FE-5000S

 Specifications 
ModelFE-5000FE-5000S
*Spot size**approx. φ 1.2approx. φ 2.0
***Wavelength range250 ~ 800nm300 ~ 800nm
Stage drivemanual / automanual
LoaderOKNG
Size and weight1,300(W) x 900(D) x 1,750(H)mm,
****approx. 350kg
650(W) x 400(D) x 560(H)mm, approx. 50kg
Measurement samplereflective sample
Sample size100 x 100mm
Principlerotating analyzer method(rotating polarizer, detachable retarder)
Thickness rangeover 0.1nm(nd)
Irradiate(reflect) angle45 ~ 90°
Irradiate(reflect) angle drive methodautomatic sine-bar drive
Tanψ accuracy
< ± 0.01
CosΔ accuracy
< ± 0.01
Reproducibility< 0.01%(measured in VLSI standard Sio 2(100nm))
Detectorpolychrometer(PDA, CCD)
Light source*****high stability xenon lamp
Software analysisLeast squares thin film analysis(reflective index model function, Cauchy dispersion model,
nk-Cauchy dispersion model), theoretical analysis(bulk surface analysis(n.k.), simultaneous
analysis of angle-dependence)

*vary by measuring condition

**micro spot available

***measurable range

****automatic stage

*****vary depends on the measuring wavelength

 Measurement 
Measurement items
  • Ellipso-parameters(tanψ, cosΔ)

  • Optical constant analysis(n: refractive index , k: extinction coefficient)

  • Thickness analysis


Measured data

> ITO structure analysis using gradient model

ITO(indium-tin-oxide) is the transparent electrode material that is used for flat display like a LCD display. The electrical conductivity and color hue of ITO are improved by annealing treatment(heat treatment) after its film formation. At that time, the oxygen state and the crystalline state of ITO will change. This change tends to gain the slope change in stages with respect to film thickness and it does not become a single layer with uniform composition optically. We’d like to introduce a case, the measurement of degree of inclination for both upper and lower surface’s nk with using the gradient model.

 Applications 
  • Semiconductor wafer
    - gate oxide thin film, nitride film
    - SiO2, SiOx, SiN, SiON, SiNx, Al2O3, poly-Si, ZnSe, BPSG, TiN, etc.
    - optical constant of resist at each wavelength


  • Compound semiconductor
    - AlGaAs, a-Si, etc.


  • FPD(Flat Panel Display)
    - oriented film
    - ITO, MgO for plasma display


  • New materials
    - DLC(Diamond Like Carbon), superconducting thin film, magnetic head thin film


  • Optical thin films
    - TiO2, SiO2, multi-layer film, antireflection film, reflection film


  • Lithography
    - optical constant for g ray(436nm), h ray(405nm), i ray(365nm), KrF(248nm)
    - optical constant of resist at each wavelength