Spectro ellipsometer

Spectro ellipsometer

Products > Display evaluation > TFT(oxide/LTPS) > FE-5000 series

Products > Semiconductor evaluation > Metrology > FE-5000 series

FE-5000 series

FE5000 measures film thickness and optical constant in the UV-visible (300 ~ 800nm) wavelength range using ellipsometry. FE5000's automatic angle adjusting mechanism widens the scope of the subject sample from the wafer, display, films to new materials. Adopting detachable retarder and rotating analyzer, the measurement accuracy has advanced and still achieves quick measurement over 400ch using multi-channel spectroscopy.

  • Ellipsometry measurement for both visible and ultraviolet ray range(250 ~ 800nm)

  • Nano-order thin film thickness

  • Quick measurement using multi channel spectroscopy(over 400ch)

  • Angle adjustable mechanism for detailed analysis

  • High operability with optical constant database and recipe registration function

  • Optical constant measurement using multi layer fitting analysis for quality control of film thickness and film property

Product image: FE-5000 and FE-5000S

▲FE-5000                                                ▲FE-5000S

▲FE-5000                      ▲FE-5000S

*Spot size**approx. φ 1.2approx. φ 2.0
***Wavelength range250 ~ 800nm300 ~ 800nm
Stage drivemanual / automanual
Size and weight1,300(W) x 900(D) x 1,750(H)mm,
****approx. 350kg
650(W) x 400(D) x 560(H)mm, approx. 50kg
Measurement samplereflective sample
Sample size100 x 100mm
Principlerotating analyzer method(rotating polarizer, detachable retarder)
Thickness rangeover 0.1nm(nd)
Irradiate(reflect) angle45 ~ 90°
Irradiate(reflect) angle drive methodautomatic sine-bar drive
Tanψ accuracy
< ± 0.01
CosΔ accuracy
< ± 0.01
Reproducibility< 0.01%(measured in VLSI standard SiO2(100nm))
Detectorpolychrometer(PDA, CCD)
Light source*****high stability xenon lamp
Software analysisLeast squares thin film analysis(refractive index model function, Cauchy dispersion model, nk-Cauchy dispersion model)
Theoretical analysis(bulk surface analysis(n.k.), simultaneous analysis of angle-dependence)

*vary by measuring condition

**micro spot available

***measurable range

****automatic stage

*****vary depends on the measuring wavelength

Measurement items
  • Ellipso-parameters(tanψ, cosΔ)

  • Optical constant analysis(n: refractive index , k: extinction coefficient)

  • Thickness analysis

Measured data

> ITO structure analysis using gradient model

ITO(indium-tin-oxide) is the transparent electrode material that is used for flat display like an LCD display. The electrical conductivity and color hue of ITO are improved by annealing treatment(heat treatment) after its film formation. At that time, the oxygen state and the crystalline state of ITO will change. This change tends to gain the slope change in stages with respect to film thickness and it does not become a single layer with uniform composition optically. We’d like to introduce a case, the measurement of the degree of inclination for both upper and lower surface’s nk with using the gradient model.

Example: sample measurement data

  • Semiconductor wafer
    - gate oxide thin film, nitride film
    - SiO2, SiOx, SiN, SiON, SiNx, Al2O3, poly-Si, ZnSe, BPSG, TiN, etc.
    - optical constant of resist at each wavelength

  • Compound semiconductor
    - AlGaAs, a-Si, etc.

  • FPD(Flat Panel Display)
    - oriented film
    - ITO, MgO for plasma display

  • New materials
    - DLC(Diamond Like Carbon), superconducting thin film, magnetic head thin film

  • Optical thin films
    - TiO2, SiO2, multi-layer film, antireflection film, reflection film

  • Lithography
    - optical constant for g ray(436nm), h ray(405nm), i ray(365nm), KrF(248nm)
    - optical constant of resist at each wavelength

6F, 41, Seongnam-daero 925beon-gil, Bundang-gu, Seongnam-si, Gyeonggi-do, 13496, Republic of Korea

Copyright ⓒ 2020 Otsuka Electronics Korea | 한국오츠카전자 All rights reserved.