Products > Semiconductor evaluation > Wafer process > SF-3 series
Products > Film evaluation > Film total thickness > SF-3 series
SF-3 saves time and costs for quality inspection by performing thickness inspection in real-time during the processing of semiconductors or films. Non-destructive and non-contact measurement enables high precision multi-layer analysis without sample damage and results can be viewed at a glance using patent granted thickness measurement algorithms.
It is a non-contact, non-destructive thickness measurement method using optics
In the case of silicon, thickness measurements from 6 to 1300 μm are possible
Parameters can be set after spectrum analysis
It uses proprietary analytical engine technology and algorithms
The automatic mapping function is available to measure the thickness distribution
It measures the thickness of multi-layered and each layer of temporary wafers
High-speed real-time monitoring - max. 60,000 points per 1 min - is possible during CMP, BG, and Final polishing(TTV, GBIR)
Model | SF-3/200 | SF-3/300 | SF-3/800 | SF-3/1300 |
Silicon meas. thickness range | 6 ~ 400μm | 10 ~ 775μm | 20 ~ 1,000μm | 50 ~ 1,300μm |
Resin meas. thickness range | 10 ~ 1,000μm | 20 ~ 1,500μm | 40 ~ 2,000μm | 1,000 ~ 2,600μm |
Minimum sampling period | 5kHz(200μsec.) | |||
Repeatability | *less than ± 0.01% | |||
Measurement size | **over about Φ20μm | |||
Measurement distance | 50mm, 80mm, 120mm, 150mm, 200mm | |||
Light source | semiconductor light source(laser class 3B product) | |||
Analysis method | FFT analysis | |||
Interface | LAN, I/O input/output terminal | |||
Power supply | DC 24V specification(AC power supply unit sold separately) | |||
Size | 123(W) x 224(D) x 128(H)mm | |||
Optional item | other lengths of probes, AC power, aluminum reference, measured light detection target, fiber cleaner |
*the standard relative deviation of our standard sample AirGap(approx.1,000μm) at time of measurement(n=20)
**design value at time of WD 80mm probe specification
Film thickness analysis(max. 5 layers)
Thickness measurement for Si wafer material
Air gap size
Grinding evaluation for silicon / compound semiconductor
1.3mm / next-generation 450mm wafer
775㎛ 300mm wafer
TSV wafer(Si layer thickness measurement on via)
Other materials(SiO2, film)
6F, 41, Seongnam-daero 925beon-gil, Bundang-gu, Seongnam-si, Gyeonggi-do, 13496, Republic of Korea
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