SF-3 series

SF-3 series

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Products > Film evaluation > Film total thickness > SF-3 series

SF-3 series Si wafer thickness monitoring system


SF-3 series enable real-time measurement of Si wafer thickness at CMP or backside grinding.


#wafer thickness, EPD, load port, double side polishing, lapping polishing, final polishing, CMP, backside grinding, polyimide, PET, TAC, polymer on Cu

 Features  
  • Non-contact, non-destructive measurement

  • Parameter setting after spectrum analysis

  • High speed real-time monitoring during CMP, backside grinding, final polishing(TTV, GBIR)

  • Measurement over inter-layer such as protection film and window material

  • Multi-layers analysis

  • Original analytical engine(patent pending)

  • Original analytical algorithm for thickness measurement(patented)

  • Automatic mapping function for thickness distribution

  • Real time measurement(max. 60,000 point per min.)

  • Load port type applicable

  • Measurement range: 20μm

 Specifications 
*ModelSF-3/200SF-3/300SF-3/1300
Silicon meas. thickness range6 ~ 400μm10 ~ 775μm50 ~ 1,300μm
Resin meas. thickness range10 ~ 1,000μm20 ~ 1,500μm1,000 ~ 2,600μm
Minimum sampling period5kHz(200μsec.)
Repeatability**less than ± 0.01%
Measurement size***over about Φ20μm
Measurement distance50mm, 80mm, 120mm, 150mm, 200mm
Light sourcesemiconductor light source(laser class 3B product)
Analysis method****FFT analysis, optimization method
InterfaceLAN, I/O input/output terminal
Power supplyDC 24V specification(AC power supply unit sold separately)
Size123(W) x 224(D) x 128(H)mm
Optional item

*CE acquired products are SF-3/300 and SF-3/1300

**the standard relative deviation of our standard sample AirGap(approx. 300μm and about 1,000μm) at time of measurement(n=20)

***design value at time of WD 50mm probe specification

****used when measuring thinned wafers

 Measurement 
Measurement item
  • Film thickness analysis(5 layers)

 Applications 
  • Thickness measurement for Si wafer material

  • Air gap size

  • Grinding evaluation for silicon / compound semiconductor

  • 1.3mm / next generation 450mm wafer

  • 775㎛ 300mm wafer

  • TSV wafer(Si layer thickness measurement on via)

  • Other materials(SiO2, film)

 Configuration