Products > Display evaluation > TFT(oxide/LTPS) > FE-5000 series
Products > Semiconductor evaluation > Metrology > FE-5000 series
FE5000 measures film thickness and optical constant in the UV-visible (300 ~ 800nm) wavelength range using ellipsometry. FE5000's automatic angle adjusting mechanism widens the scope of the subject sample from the wafer, display, films to new materials. Adopting detachable retarder and rotating analyzer, the measurement accuracy has advanced and still achieves quick measurement over 400ch using multi-channel spectroscopy.
Ellipsometry measurement for both visible and ultraviolet ray range(250 ~ 800nm)
Nano-order thin film thickness
Quick measurement using multi channel spectroscopy(over 400ch)
Angle adjustable mechanism for detailed analysis
High operability with optical constant database and recipe registration function
Optical constant measurement using multi layer fitting analysis for quality control of film thickness and film property
โฒFE-5000 โฒFE-5000S
โฒFE-5000 โฒFE-5000S
| Model | FE-5000 | FE-5000S |
| *Spot size | **approx. φ 1.2 | approx. φ 2.0 |
| ***Wavelength range | 250 ~ 800nm | 300 ~ 800nm |
| Stage drive | manual / auto | manual |
| Loader | OK | NG |
| Size and weight | 1,300(W) x 900(D) x 1,750(H)mm, ****approx. 350kg | 650(W) x 400(D) x 560(H)mm, approx. 50kg |
| Measurement sample | reflective sample | |
| Sample size | 100 x 100mm | |
| Principle | rotating analyzer method(rotating polarizer, detachable retarder) | |
| Thickness range | over 0.1nm(nd) | |
| Irradiate(reflect) angle | 45 ~ 90° | |
| Irradiate(reflect) angle drive method | automatic sine-bar drive | |
| Tanψ accuracy | < ± 0.01 | |
| CosΔ accuracy | < ± 0.01 | |
| Reproducibility | < 0.01%(measured in VLSI standard SiO2(100nm)) | |
| Detector | polychrometer(PDA, CCD) | |
| Light source | *****high stability xenon lamp | |
| Software analysis | Least squares thin film analysis(refractive index model function, Cauchy dispersion model, nk-Cauchy dispersion model) Theoretical analysis(bulk surface analysis(n.k.), simultaneous analysis of angle-dependence) | |
*vary by measuring condition
**micro spot available
***measurable range
****automatic stage
*****vary depends on the measuring wavelength
Ellipso-parameters(tanψ, cosΔ)
Optical constant analysis(n: refractive index , k: extinction coefficient)
Thickness analysis
Measured data
> ITO structure analysis using gradient model
ITO(indium-tin-oxide) is the transparent electrode material that is used for flat display like an LCD display. The electrical conductivity and color hue of ITO are improved by annealing treatment(heat treatment) after its film formation. At that time, the oxygen state and the crystalline state of ITO will change. This change tends to gain the slope change in stages with respect to film thickness and it does not become a single layer with uniform composition optically. We’d like to introduce a case, the measurement of the degree of inclination for both upper and lower surface’s nk with using the gradient model.
Semiconductor wafer
- gate oxide thin film, nitride film
- SiO2, SiOx, SiN, SiON, SiNx, Al2O3, poly-Si, ZnSe, BPSG, TiN, etc.
- optical constant of resist at each wavelength
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