Products > Semiconductor evaluation > Metrology >TFE-300
All features required for wafer thickness measurement are integrated into the head.
High-precision absolute reflectance using fine spectroscopy can be measured at a high speed of less than 1 second/point.
In addition, the wide wavelength range (UV~NIR) allows fine thin films as well as multi-layered structure analysis (more than three layers).
An optical system which realizes measurement with a wide wavelength range (UV to NIR)
Multi stacked layer structure analysis (above 3 layer)
Customizations of H/W, S/W, and Communication functions
Max 12” foup-based load/unload
Pattern recognition for multi-layer on pattern wafer
Category | Content | Spec. | Notes |
| X-Y Motor | Stroke | above 300mm | |
| Theoretical Resolution | 1㎛ | ||
| Z Motor | Stroke | 14mm | |
| Theoretical Resolution | under 1㎛ | ||
| Wafer Aligner | notch align reproducibility | under 0.1° | θ align |
| Camera | FOV | 712x533 ㎛ | X10 Lens (Customizable) |
| Spectrometer (MCPD) | Wavelength range | 360~1100nm | Customizable (DUV to NIR: 250~1600nm) |
| Wavelength accuracy | under 0.3nm | Calibration: 1time/year | |
| Wavelength width | 1.6nm/pixel | 512ch or 1024ch | |
| Lamp | Light source | LDLS or TH Lamp | |
| Lifetime | 10,000h or 1,500h | Respectively | |
| Spot | Size | Φ 20㎛ | X10 Lens (4~20Φ um, selected by the magnification of each lens) |
| Measurement | Thickness Range | 7nm~49㎛ | Applied n=1.5 |
| Accuracy | under 0.1nm | Under SiO2 on Si 100nm (Certificated Sample) | |
| under 0.07% | Under SiO2 on Si 100nm (Certificated Sample) | ||
| Reflectance Repeatability | under 0.5% | wavelength range: 400~800nm |
| Material | Thickness Range |
| oxide | 70Å~49㎛ |
| nitride | 50Å~40㎛ |
| oxynitride | 60Å~45㎛ |
| TEOS | 70Å~49㎛ |
| a-Si | 150Å~20㎛ |
| Poly-Si | 150Å~20㎛ |
| Photoresist | 60Å~45㎛ |
Measure by adding a variety of options on one equipment without increasing the size of the equipment!
RS (Sheet Resistance)
∙ Non-Contact Sheet Resistance
: Eddy Current analysis
∙ 4 Point Probe Sheet Resistance
: 1mΩ/□~1GΩ/□
Wafer Thickness Meter
∙ High speed Sampling (5kHz)
: 60,000 point/1min
∙ Thickness Range: 6~1300㎛
∙ non-contact, non-destructive
Spectroscopic Ellipsometer
∙ Ultra thin film analysis
: 10Å~35㎛
∙ Optical constant analysis (n, k)
6F, 41, Seongnam-daero 925beon-gil, Bundang-gu, Seongnam-si, Gyeonggi-do, 13496, Republic of Korea
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